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| AP4575M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 G2 S2 S2 S1 G1 G1 S1 60V 36m 6A -60V 72m -4.2A SO-8 SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID P-CH BVDSS RDS(ON) ID D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 60 20 6 4.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -60 20 -4.2 -3.3 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200607041 AP4575M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.04 8 18 5 10 10 6 32 10 160 117 Max. Units 36 42 3 1 25 100 29 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VGS=10V, ID=5A VGS=4.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=20V ID=5A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1670 2670 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=5A, VGS=0V dI/dt=100A/s Min. - Typ. 34 48 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4575M P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -60 -1 - Typ. -0.04 6 21 5 9 12 6 82 36 157 130 Max. Units 72 88 -3 -1 -25 100 34 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=20V ID=-4A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A RG=3.3,VGS=-10V RD=30 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1780 2850 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=-4A, VGS=0V dI/dt=-100A/s Min. - Typ. 43 87 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP4575M N-Channel 60 50 T A = 25 o C 50 ID , Drain Current (A) 40 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V TA=150oC 40 10V 7.0V 5.0V 4.5V 30 30 20 20 V G =3.0V 10 V G =3.0V 10 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 38 1.8 36 ID=3A Normalized RDS(ON) T A =25 C o 1.6 I D =5A V G =10V 1.4 34 RDS(ON) (m ) 1.2 32 1.0 30 0.8 28 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 5 1.3 4 Normalized VGS(th) (V) 1.1 3 IS(A) 0.9 T j =150 o C 2 T j =25 o C 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4575M N-Channel f=1.0MHz 14 10000 VGS , Gate to Source Voltage (V) 12 I D =5A V DS =48V C iss 10 8 C (pF) 1000 6 4 2 C oss C rss 0 0 5 10 15 20 25 30 35 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 0.1 0.1 0.05 ID (A) 1ms 1 0.02 10ms 100ms 0.1 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4575M P-Channel 40 40 35 T A = 25 C o -ID , Drain Current (A) -ID , Drain Current (A) 30 -10V -7.0V -5.0V -4.5V 35 TA=150oC 30 25 25 -10V -7.0V -5.0V -4.5V 20 20 15 15 V G =-3.0V 10 V G =-3.0V 10 5 5 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 ID=-3A 75 1.6 T A =25 o C Normalized R DS(ON) 1.4 ID=-4A V G =-10V RDS(ON) (m ) 70 1.2 1.0 65 0.8 60 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 4 1.3 Normalized -VGS(th) (V) 3 -IS(A) 1.1 2 T j =150 o C T j =25 o C 0.8 1 0.6 0 0.3 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4575M P-Channel f=1.0MHz 16 10000 -VGS , Gate to Source Voltage (V) I D =-4A V DS =-48V 12 8 C (pF) C iss 1000 4 C oss C rss 0 0.0 10.0 20.0 30.0 40.0 50.0 60.0 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 0.1 1ms -ID (A) 1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.1 T A =25 C Single Pulse o 1s DC 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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